2SA1162 数据手册
其他文档
2SA1162 2 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Jiangsu Changjing Electronics Technology Co., Ltd. 2SA1162
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 150mA
- Power Dissipation (Pd): 150mW
- Transition Frequency (fT): 80MHz
- DC Current Gain (hFE@Ic,Vce): 120@2mA,6V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@100mA,10mA
- Package: SOT-23
- Manufacturer: Jiangsu Changjing Electronics Technology Co., Ltd.